Exponential absorption edge and disorder in Column IV amorphous semiconductors

Far - Infrared Absorption in Amorphous 111 - V Compound Semiconductors

The infrared spectra of amorphous films of Gap, GaAs, GaSb, InAs, and Ge prepared by sputtering have been measured from 10 to 4000 cm-1. The absorption spectra in the region of the “optical” phonon frequencies show similarities to the phonon density of states as deduced from Raman scattering but the absorption becomes much smaller a t low frequencies. It is shown that while the coupling constan...

Optical-absorption edge and disorder effects in hydrogenated amorphous diamondlike carbon films.

Optical-absorption edge and disorder effects in hydrogenated amorphous diamondlike carbon films" (1989).

Defects in Amorphous Semiconductors: Amorphous Silicon

Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between defect phenomena in crystalline and amorphous hosts are described, and the special importance of the electron–phonon coupling is stressed. Detailed calculations for amorphous Si are presented using accurate first principles (density-functional) tech...

Ion Exchange Column Performance Model for Separation of Zr(IV) and Hf(IV) in Elution Process

A mathematical model of sorption of Zirconium and Hafnium cations mixture and elution of these ions from a cation exchange resin bed is developed. Sulfuric acid is selected as the eluent for selective separation of Zr and Hf in a packed bed of Dowex cation exchange resin. The column model is a dispersed plug flow model,and assumed to consist of randomly packed synthetic and spherical resin ...

Spin Injection into Amorphous Semiconductors